Reaction properties and interfacial intermetallics for Sn-xAg-0.5Cu solders as a function of Ag content

Metals and Materials International

Volumn 14, Issue 5, 2008, Pages 649-654

  Lee, Jong Hyun ^a   Yu, A Mi ^b   Kim, Jeong Han ^b   Kim, Mok Soon ^c   Kang, Namhyun ^d  

^a Seoul National University of Science and Technology   (South Korea)

^b Korea Institute of Industrial Technology   (South Korea)

^c Inha University   (South Korea)

^d Pusan National University   (South Korea)

Author keywords

Intermetallic compound (IMC); Pb free solder; Sn Ag Cu alloy; Undercooling; Wetting

Indexed keywords

COPPER ALLOYS; DIFFERENTIAL SCANNING CALORIMETRY; INTERMETALLICS; LEAD-FREE SOLDERS; MELTING POINT; SILVER ALLOYS; TERNARY ALLOYS; UNDERCOOLING; WETTING;

EXOTHERMIC HEAT FLOW; INTERFACIAL INTERMETALLICS; REACTION PROPERTY; SHOCK RELIABILITY; SN-AG-CU ALLOY; SOLIDIFICATION TEMPERATURE; WETTING PROPERTY; ZERO CROSS TIME;

TIN ALLOYS;

EID: 55349088925     PISSN: 15989623     EISSN: None     Source Type: Journal    
DOI: 10.3365/met.mat.2008.10.649     Document Type: Article

References (21)

1. E. Bradley, C. Handwerker, and J. E. Sohn, Surface Mount Technology (SMT) Jan., 24 (2003).
2. rd Electronic Components and Technology (ECTC) Conf., p. 64, IEEE, New Orleans, U.S. (2003).
3. R. Kinyanjui, L. P. Lehman, L. Zavalij, and E. Cotts, J. Mater. Res. 20, 2914 (2005).
4. S. K. Kang, M. G. Cho, P. Lauro and D -Y. Shih, Proc. 57th Electronic Components and Technology (ECTC) Conf., p. 1597, IEEE, Reno, U.S. (2007).
5. W. B. De Castro, M. de Lucena Maia, C. S. Kiminami, and C. Bolfarini, Mater. Res. 4, 83 (2001).
6. rd Electronic Components and Technology (ECTC) Conf., p. 317, IEEE, New Orleans, U.S. (2003).
7. M. J. Rizvi, Y. C. Chan, C. Bailey, H. Lu, M. N. Islam, and B. Y. Wu, J. Electron. Mater. 34, 1115 (2005).
8. J. S. Hwang, Modern Solder Technology for Competitive Electronics Manufacturing, p. 74-77, McGraw-Hill, New York (l996).
9. I. Ohnuma, X. J. Liu, K. Anzai, H. Ohtani, R. Kainuma, and K. Ishida, J. Electron. Mater. 29, 1137 (2000).
10. K. -W. Moon, W. J. Boettinger, U. R. Kattner, F. S. Biancaniello, and C. A. Handwerker, J. Electron. Mater. 29, 1122 (2000).
11. J. -Y. Park, C. -U. Kim, T. Carper, and V. Puligandla, J. Electron. Mater. 32, 1297 (2003).
12. K. -W. Moon and W. J. Boettinger, JOM 56, 22 (2004).
13. M. L. Huang and L. Wang, Metall. Mater. Trans. A. 36, 1073 (2005).
14. S. K. Kang, P. A. Lauro, D. Y Shin, D. W. Henderson, and K. J. Puttlitz, IBM J. Res. & Dev. 49, 607 (2005).
15. D. Q. Yu, J. Zhao, and L. Wang, J. Alloy. Compd. 376, 170 (2004).
16. J. -W. Yoon, C. -B. Lee, D. -U. Kim, and S. -B. Jung, Met. Mater. -Int. 9, 193 (2003).
17. K. S. Kim, S. H. Huh, and K. Suganuma, Mater. Sci. Eng. A 333, 106 (2002).
18. K. S. Kim, S. H. Huh, and K. Suganuma, J. Alloy. Compd. 352, 226 (2003).
19. J. -M. Song, J. -J. Lin, C. -F. Huang, and H. -Y Chuang, Mater. Sci. Eng. A 466, 9 (2007).
20. th Electronic Components and Technology (ECTC) Conf., p. 1256, IEEE, Las Vegas, U.S. (2004).
21. S. C. Hung, P. J. Zheng, S. H. Ho, S. C. Lee, H. N. Chen, and J. D. Wu, Microelectron. Reliab. 41, 677 (2001).