Temperature distribution analysis of AlGaN/GaN HFETs operated around breakdown voltage using micro-Raman spectroscopy and device simulation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2744-2747

  Kosaka, Kenichi ^a   Fujishima, Tatsuya ^a   Inoue, Kaoru ^b   Hinoki, Akihiro ^a   Yamada, Tomoaki ^b   Tsuchiya, Tadayoshi ^b   Kikawa, Junjiroh ^b   Kamiya, Shinichi ^b   Suzuki, Akira ^a,b   Araki, Tsutomu ^a   Nanishi, Yasushi ^a  

^a RITSUMEIKAN UNIVERSITY   (Japan)

^b R&D Association for Future Electron Devices   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN HFETS; BREAK DOWN VOLTAGES; DEVICE SIMULATIONS; DISTRIBUTION ANALYSIS; HIGH POWERS; JUNCTION FIELD EFFECT TRANSISTORS; MICRO-RAMAN SPECTROSCOPY; NITRIDE SEMICONDUCTORS; RAMAN SHIFTING; RF DEVICES; SIC SUBSTRATES;

ARCHITECTURAL ACOUSTICS; CRYSTALS; ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; GALLIUM NITRIDE; IONIZATION OF GASES; NITRIDES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR MATERIALS; SILICON CARBIDE; SPECTRUM ANALYSIS; TEMPERATURE DISTRIBUTION; THERMOANALYSIS; THERMOSTATS;

FIELD EFFECT TRANSISTORS;

EID: 49749145252     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674906     Document Type: Conference Paper

References (4)

1. M. Kuball, J. M. Hayes, M. J. Uren, T. Martin et al., IEEE Electron Device Lett. 23, 7 (2002).
2. Y. Ohno, M. Akita, S. Kishimoto, K. Maezawa, and T. Mizutani, Jpn. J. Appl. Phys. 41, 452 (2002).
3. K. Kosaka, T. Fujishima, K. Inoue et al., Proc. IEEE 2006, IMFEDK (April 2006, Kyoto), p. 81.
4. R. Vetury, N. Q. Zhang, S. Keller, and U. K. Mishra, IEEE Electron Device 48, 560 (2001).