Comparison of static, switching and thermal behavior between a 1500 V silicon and silicon carbide bipolar diodes

Proceedings of the International Semiconductor Conference, CAS

Volumn 1, Issue , 1999, Pages 195-198

  Nallet, F ^a   Planson, D ^a   Isoird, K ^a   Locatelli, M L ^a   Chante, J P ^a  

^a CNRS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR SEMICONDUCTOR DEVICES; ELECTRIC RECTIFIERS; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; THERMAL CONDUCTIVITY OF SOLIDS;

BIPOLAR DIODES;

SEMICONDUCTOR DIODES;

EID: 0033324280     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (13)