Temperature dependent characteristics of nonreach-through 4H-SiC separate absorption and multiplication APDs for UV detection

IEEE Sensors Journal

Volumn 8, Issue 3, 2008, Pages 233-237

  Cha, Ho Young ^a,b   Soloviev, Stanislav ^c   Zelakiewicz, Scott ^c   Waldrab, Peter ^d   Sandvik, Peter M ^a,c  

^a IEEE

^b Hong Ik University   (South Korea)

^c GE GLOBAL RESEARCH   (United States)

^d Alcan Technology Center   (United States)

Author keywords

Avalanche photodiode; Separate absorption multiplication (SAM); Silicon carbide; UV

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRONICS PACKAGING; LEAKAGE CURRENTS; SILICON CARBIDE; TEMPERATURE DISTRIBUTION; ULTRAVIOLET RADIATION;

FIELD-INDUCED LEAKAGE CURRENTS; ROOM TEMPERATURE; SEPARATE ABSORPTION MULTIPLICATION (SAM); TEMPERATURE DEPENDENT CHARACTERISTICS;

AVALANCHE PHOTODIODES;

EID: 38749153264     PISSN: 1530437X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSEN.2007.913033     Document Type: Article

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