Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept

Microelectronic Engineering

Volumn 81, Issue 1, 2005, Pages 90-95

  Kumar, M Jagadesh ^a   Parihar, Vinod ^a  

^a INDIAN INSTITUTE OF TECHNOLOGY DELHI   (India)

Author keywords

Bipolar transistors; Current gain; Semiconductor devices; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DOPING;

BASE CURRENT; CURRENT GAIN; MINORITY CARRIERS; SURFACE ACCUMULATION LAYER TRANSISTORS (SALT);

BIPOLAR TRANSISTORS;

EID: 21644448434     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.002     Document Type: Article

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