Strain relaxation in strained-Si layers on SiGe-on-insulator substrates

Semiconductor Science and Technology

Volumn 22, Issue 1, 2007, Pages

  Hirashita, N ^a   Moriyama, Y ^a   Sugiyama, N ^a   Toyoda, E ^b   Takagi, S ^a  

^a TOSHIBA CORPORATION   (Japan)

^b Nissei Bldg   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); SEMICONDUCTOR GROWTH; SILICON ON INSULATOR TECHNOLOGY; STRAIN RELAXATION; TENSILE STRESS;

HOUGHTON'S CRITICAL THICKNESS; STRAINED-SI LAYERS; STRESS-RELIEVING;

SILICON COMPOUNDS;

EID: 34247237730     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/1/S05     Document Type: Article

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