Structural and dielectric properties of oxynitride perovskite LaTiOxNy thin films

Thin Solid Films

Volumn 517, Issue 2, 2008, Pages 544-549

  Ziani, A ^a   Le Paven Thivet, C ^a   Le Gendre, L ^a   Fasquelle, D ^b   Carru, J C ^b   Tessier, F ^c   Pinel, J ^a  

^a UNIVERSITÉ DE RENNES 1   (France)

^b UNIVERSITÉ DU LITTORAL CÔTE D OPALE   (France)

^c INSTITUT DES SCIENCES CHIMIQUES DE RENNES   (France)

Author keywords

Dielectric constant; Epitaxy; LaTiOxNy; Oxynitride; Perovskite; Reactive sputtering; Thin films

Indexed keywords

CERAMIC CAPACITORS; CRYSTAL GROWTH; DIELECTRIC PROPERTIES; DIELECTRIC WAVEGUIDES; NIOBIUM; NITRIDES; OXIDE MINERALS; PERMITTIVITY; PEROVSKITE; REACTIVE SPUTTERING; SUBSTRATES; THICK FILMS; THIN FILMS;

DIELECTRIC CONSTANT; DIELECTRIC CONSTANTS; EPITAXIALLY GROWN; EPITAXY; LATIOXNY; OXYNITRIDE; OXYNITRIDE PEROVSKITES; POLYCRYSTALLINE; RANGING; ROOM TEMPERATURES; SUBSTRATE TEMPERATURES; TRANSPARENT FILMS;

NITROGEN;

EID: 55049119326     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.06.061     Document Type: Article

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