Dual gate-recess structure of metamorphic high-electron-mobility transistors for enhancing fmax

Journal of the Electrochemical Society

Volumn 155, Issue 12, 2008, Pages

  Oh, Jung Hun ^a   Han, Min ^a   Moon, Sung Woon ^a   Lee, Seokhun ^a   Hwang, In Seok ^a   Kim, Sam Dong ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING ALUMINUM COMPOUNDS; TRANSISTORS;

CAP LAYERS; DC CHARACTERISTICS; DRAIN CAPACITANCES; DRAIN ELECTRODES; DRAIN SPACINGS; DUAL GATES; ELECTRICAL ISOLATIONS; EXTRINSIC TRANSCONDUCTANCES; MAXIMUM FREQUENCY OF OSCILLATIONS; SURFACE EFFECTS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 54949089696     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2992083     Document Type: Article

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