Low-frequency transconductance dispersion characteristics of 0.13μm in0.65GaAs p-HEMTs with side-recessed InAlAs and InP surface

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2004, Pages 370-373

  Kim, Tae Woo ^a   Kim, Dae Hyun ^b   Kang, In Ho ^a   Kim, Jeong Hoon ^a   Seo, Kwang Seok ^b   Song, Jong In ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTROMAGNETIC DISPERSION; EPITAXIAL GROWTH; IONIZATION; NATURAL FREQUENCIES; REDUCTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; TRANSCONDUCTANCE;

EPITAXIAL LAYERS; GATE STRUCTURE; HOLE CURRENTS; KINK EFFECT;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 23744477535     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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