Influence of silicon nitride passivation on DC and RF characteristics of 0.1 μm pseudomorphic HEMTs

Journal of the Electrochemical Society

Volumn 152, Issue 4, 2005, Pages

  Oh, Jung Hun ^a   Sul, Woo Suk ^a   Rhee, Jin Koo ^a   Kim, Sam Dong ^a  

^a Dongguk University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUBES; PASSIVATION; SEMICONDUCTOR DEVICES; SILICON NITRIDE; SURFACE PROPERTIES; THIN FILMS;

GATE-SOURCE CAPACITANCE; PINCHOFF VOLTAGE; SILICON NITRIDE PASSIVATION; SURFACE DEPOSITION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 18344382922     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1864772     Document Type: Article

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