Two-dimensional device simulation for PHEMT material and process control

Proceedings of the IEEE 24th International Symposium on Compound Semiconductors, ISCS 1997

Volumn , Issue , 1997, Pages 647-650

  Pao, Y C ^a   Harris, J S ^b  

^a NORTHROP GRUMMAN CORPORATION   (United States)

^b Stanford University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRICAL ENGINEERING;

GATE LENGTH; GATE RECESS; PROCESS-RELATED PARAMETERS; SATURATION VELOCITY; SHEET CHARGE DENSITY; TWO DIMENSIONAL DEVICE SIMULATION;

HETEROJUNCTIONS;

EID: 34249893286     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCS.1998.711760     Document Type: Conference Paper

References (6)

1. Z. Yu, D, Chen, L. So, R. W. Dutton, Integrated Circuit Laboratory Technical Report, Stanford University (1994
2. Atlas Device Simulation Manual, Silvaco International, October (1996)
3. F. Stern, S. Das Sarma, Physics Reviews B, Vol. 30, Number 2 (1984) 840.
4. Y. C, Pao, C. Nishimoto, R. Majidi-Ahy, J. Archer, N. G. Bechtel, J. S. Harris, Jr., IEEE Transaction on Electron Devices, Vol. 37, No. 10 (1990) 2165.
5. F, Smith, A. R. Calawa, C. L. Chen, M. J. Manfra, LJ. Mahoney, IEEE Electron Device Lett. 9 (1988) 77.
6. M. R. Melloch, N. Otsuka, J. M. Woodall, A. C. Warten, J. L. Freeouf, Appl. Phys. Lett. 57 (1990)1531.