Electrical properties of ultra-thin oxynitrided layer using N2O plasma in inductively coupled plasma chemical vapor deposition for non-volatile memory on glass

Thin Solid Films

Volumn 515, Issue 16 SPEC. ISS., 2007, Pages 6615-6618

  Jung, Sungwook ^a   Hwang, Sunghyun ^a   Kim, Kyunghae ^a   Dhungel, S K ^a   Chung, Ho Kyoon ^b   Choi, Byoung Deog ^b   Lee, Ki Yong ^b   Yi, J ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung SDI   (South Korea)

Author keywords

Nitrous oxide (N2O); Non Volatile Memory (NVM); Plasma assisted oxynitridation; Tunnel oxynitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC PROPERTIES; FILM THICKNESS; GLASS; INDUCTIVELY COUPLED PLASMA; NONVOLATILE STORAGE;

NITROUS OXIDE; PLASMA-ASSISTED OXYNITRIDATION; TUNNEL OXYNITRIDE;

ULTRATHIN FILMS;

EID: 34247479416     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2006.11.146     Document Type: Article

References (8)

1. Kimura H., Maeda T., Tsunashima T., Morita T., Murata H., hirota S., and Sato H. Digest 01 (2001) 268 SID
2. Tokioka H., Agari M., Inoue M., Yamamoto T., Murai H., and Nagata H. Digest 01 (2001) 280 SID
3. Brotherton S.D., McCulloch D.J., Clegg J.B., and Gowers J.P. IEEE Trans. Electron Devices, 40 (1993) 407
4. Smith P.M., Carey P.G., and Sigmon T.W. Appl. Phys. Lett. 70 (1997) 342
5. Uchikoga S., and Ibaraki N. Thin Solid Films 383 (2001) 19
6. Brune J., Nikolaus B., and Simon F. Thin Solid Films 487 (2005) 85
7. Lee J.W., Lee N.I., and Han C.H. IEEE Electron Devices Lett. 19 (1998) 458
8. Hess D.W. IBM J. Res. Dev. 43 (1999) 127