Gate oxide integrity for polysilicon thin-film transistors: A comparative study for ELC, MILC, and SPC crystallized active polysilicon layer

Materials Research Society Symposium Proceedings

Volumn 862, Issue , 2005, Pages 647-651

  Choi, D C ^a   Choi, B D ^a   Jung, J Y ^a   Park, H H ^a   Seo, J W ^a   Lee, K Y ^a   Chung, H K ^a  

^a Samsung SDI   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CONTAMINATION; CRYSTALLIZATION; EXCIMER LASERS; IMPURITIES; THIN FILM TRANSISTORS; WEIBULL DISTRIBUTION;

GATE OXIDES; METAL INDUCED LATERAL CRYSTALLIZATION (MILC); POLYSILICON FILMS; SOLID PHASE CRYSTALLIZATION (SPC);

POLYSILICON;

EID: 30544448856     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-862-a22.1     Document Type: Conference Paper

References (9)

1. Mark Stewart, Robert S. Howell, Leo Pires and Miltiadis K. Hatalis: IEEE Trans. Electron Devices 48 (2001) 845.
2. B. D. Choi and D. K. Schroder: Appl. Phys. Lett. 79 (2001) 2645.
3. nd ed.
4. S. W. Lee and S. K. Joo: IEEE Electron Device Letters, 17, No. 4, (1996) 160.
5. M. Wong, Zjin, G. A. Bhat, P. C. Wong, and H.S. Kwok: IEEE Trans. Electron Devices 47 (2000) 1061.
6. D. Walz, J. P. Joly, R. Falster and G. Kamarinos: Jpn. J. Appl. Phys. 34 (1995) 4091.
7. R. Holzl, A. Huber, L. Fabry, K. J. Range, and M. Blietz: Appl. Phys. A: Mater. Sci. Process. A72, (2001) 351.
8. J. Wong-Leung, D. J. Eaglesham, J. Sapjeta, D. C. Jacobson, J. M. Poate, and J.S. Williams: J. Appl. Phys. 83 (1998) 580.
9. B. D. Choi: Ph.D. Thesis, Electrical Engineering, Arizona State University, Tempe, Arizona, USA, 2001.