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Journal of Applied Physics

Volumn 83, Issue 10, 1998, Pages 5239-5243

Two types of growth mode for Ge clusters on Si(100) substrate with and without atomic hydrogen exposure prior to the growth

(2) Tezuka, Tsutomu a Sugiyama, Naoharu a

a TOSHIBA CORPORATION (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001943261 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.367345 Document Type: Article

Times cited : (7)

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