Resistivity analysis of epitaxially grown, doped semiconductors using energy dependent secondary ion mass spectroscopy

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Burnham, Shawn D ^a   Thomas, Edward W ^a   Doolittle, W Alan ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; GALLIUM NITRIDE; MAGNETIC FLUX; SECONDARY ION MASS SPECTROMETRY;

FREE CARRIERS; HOST ATOM SECONDARY ION (HASI) ENERGY DISTRIBUTION; QUANTITATIVE OPTIMIZATION;

SEMICONDUCTOR MATERIALS;

EID: 33845776223     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2395680     Document Type: Article

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