Latest progress in growth of silicon nanowire and growth mechanisms

Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology

Volumn 28, Issue 5, 2008, Pages 429-436

  Peng, Yingcai ^a,b   Zhao, Xinwei ^c,d   Fan, Zhidong ^a   Bai, Zhenhua ^a  

^a HEBEI UNIVERSITY   (China)

^b INSTITUTE OF SEMICONDUCTORS   (China)

^c TOKYO UNIVERSITY OF SCIENCE   (Japan)

^d INSTITUTE OF MICROELECTRONICS   (China)

Author keywords

Metal catalytic growth; Optoelectronic device applications; Oxide assisted growth; Silicon nanowires; Vapor liquid solid growth

Indexed keywords

DATA STORAGE EQUIPMENT; ELECTRIC WIRE; FIELD EMISSION; INTEGRATION; MAGNETIC PROPERTIES; MATERIALS PROPERTIES; NANOSENSORS; NANOSTRUCTURED MATERIALS; NANOWIRES; OPTICAL SENSORS; OPTOELECTRONIC DEVICES; SENSOR NETWORKS; SILICON; VAPORS; WIRE;

CATALYTIC GROWTHS; DETECTION DEVICES; EFFICIENT; ELECTRICAL; FIELD EFFECTS; FIELD EMISSION DEVICES; GROWTH MECHANISMS; GROWTH TECHNOLOGIES; INTEGRATION TECHNOLOGIES; OPTICAL; OPTOELECTRONIC MATERIALS; POTENTIAL APPLICATIONS; RESEARCH AND DEVELOPMENTS; SI NANOWIRES; SILICON NANOWIRES; SINGLE ELECTRON MEMORY DEVICES;

NANOSTRUCTURES;

EID: 54549115978     PISSN: 16727126     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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