Effects of dielectric-layer composition on growth of self-formed Ti-rich barrier layers in Cu(1 at % Ti)/low-k samples

Materials Transactions

Volumn 49, Issue 9, 2008, Pages 1987-1993

  Kohama, Kazuyuki ^a   Ito, Kazuhiro ^a   Tsukimoto, Susumu ^a   Mori, Kenichi ^b   Maekawa, Kazuyoshi ^b   Murakami, Masanori ^a,c  

^a KYOTO UNIVERSITY   (Japan)

^b RENESAS TECHNOLOGY CORP   (Japan)

^c Ritsumeikan Trust   (Japan)

Author keywords

Barrier layer; Cu(Ti) alloy film; Low k films; TiC; TiSi

Indexed keywords

ALLOYS; ANNEALING; ATOMIC PHYSICS; ATOMS; CHEMICAL ANALYSIS; CONCENTRATION (PROCESS); COPPER; COPPER ALLOYS; DIFFUSION; DIFFUSION BARRIERS; ELECTRIC CURRENTS; ELECTRIC PROPERTIES; FILM GROWTH; METALLIC FILMS; MICROSCOPIC EXAMINATION; MOS DEVICES; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SEMICONDUCTOR DOPING; TEMPERATURE INDICATING CAMERAS; TITANIUM CARBIDE; TITANIUM COMPOUNDS; ULTRAHIGH VACUUM;

BARRIER LAYER; CU(TI) ALLOY FILM; LOW-K FILMS; TIC; TISI;

TITANIUM ALLOYS;

EID: 54549111313     PISSN: 13459678     EISSN: None     Source Type: Journal    
DOI: 10.2320/matertrans.MAW200809     Document Type: Article

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