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Volumn 2008, Issue , 2008, Pages

Three-dimensional residue-free volume removal inside sapphire by high-temperature etching after irradiation of femtosecond laser Pulses

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EID: 54549102221     PISSN: 02786273     EISSN: None     Source Type: Journal    
DOI: 10.1155/2008/892721     Document Type: Article
Times cited : (12)

References (19)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.