Microscopic analysis of high quality thick ZnO CVD layers: Imaging of growth domains, strain relaxation, and impurity incorporation

Physica Status Solidi (B) Basic Research

Volumn 229, Issue 2, 2002, Pages 891-895

  Riemann, T ^a   Christen, J ^a   Kaczmarczyk, G ^b   Kaschner, A ^b   Hoffmann, A ^b   Zeuner, A ^c   Hofmann, D ^c   Meyer, B K ^c  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^c JUSTUS LIEBIG UNIVERSITY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; EPILAYERS; GALLIUM NITRIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; LUMINESCENCE; OXIDE MINERALS; RED SHIFT; TEMPERATURE; ZINC OXIDE;

COMPRESSIVE STRAIN; IMPURITY INCORPORATION; INTERNAL ELECTRIC FIELDS; LOW-TEMPERATURE LUMINESCENCE; MICROSCOPIC ANALYSIS; SPATIAL EVOLUTION; SPATIALLY RESOLVED; VAPOR PHASE DEPOSITION;

TENSILE STRAIN;

EID: 0036001986     PISSN: 03701972     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-3951(200201)229:2<891::aid-pssb891>3.0.co;2-%23     Document Type: Article

References (6)