Direct imaging of local strain relaxation along the {1101} side facets and the edges of hexagonal GaN pyramids by cathodoluminescence microscopy

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 2, Issue 1-4, 1998, Pages 552-556

  Bertram, F ^a   Christen, J ^a   Schmidt, M ^a   Hiramatsu, K ^b   Kitamura, S ^b   Sawaki, N ^b  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Cathodoluminscence microscopy; GaN; Selective MOVPE; Strain relaxation

Indexed keywords

EID: 0001682731     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(98)00114-3     Document Type: Article

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