High-performance and high-uniformity InP/InGaAs/InP DHBT technology for high-speed optical communication systems

Technical Digest - GaAs IC Symposium (Gallium Arsenide Integrated Circuit)

Volumn , Issue , 2002, Pages 269-272

  Yang, Y ^a   Frackoviak, J ^a   Liu, C T ^a   Chen, C J ^a   Chua, L L ^a   Sung, W J ^a   Tate, A ^a   Tong, J ^a   Reyes, R ^a   Kopf, R ^a   Ruel, R ^a   Werder, D ^a   Houtsma, V ^a   Georgiou, G ^a   Weiner, J S ^a   Baeyens, Y ^a   Chen, Y K ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMMUNICATION SYSTEMS; ELECTRIC BREAKDOWN; EPITAXIAL GROWTH; INTEGRATED CIRCUIT MANUFACTURE; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SUBSTRATES;

DOUBLE HETEROJUNCTIONS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0036440087     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

1. G. Raghaven et al., "InP ICs unleash the high-frequency spectrum," IEEE Spectrum, October 2000.
2. Y. Baeyens et al., "InP D-HBT IC's for 40Gb/s and higher bit-rate lightwave tranceivers," IEEE Gads IC Symp. Tech. Dig., 2001, pp. 125-128.
3. Y.K. Chen et al., "Semiconductor Technologies for High-Speed Optical Networking," IEDM Tech. Dig., 2001; and OFC Tech. Dig., 2002.
4. Y.K. Chen et al., "Semiconductor Technologies for High-Speed Optical Networking," IEDM Tech. Dig., 2001; and OFC Tech. Dig., 2002.
5. max = 425 GHz", IEEE GaAs IC Symp. Tech. Dig., 2001, pp. 185-187.
6. A. Fujihara et al., "High-Speed InP/InGaAs DHBTs with ballistic collector launcher structure," IEDM Tech. Dig., 2001.
7. 2," IEDM Tech. Dig., 2001.