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Volumn 77, Issue 3, 2008, Pages

Giant tunneling magnetoresistance in mgo-based magnetic tunnel junctions

Author keywords

Al O; Magnetic tunnel junction; Magnetoresistance; MgO; Spintronics; TMR

Indexed keywords


EID: 54349124565     PISSN: 00319015     EISSN: 13474073     Source Type: Journal    
DOI: 10.1143/JPSJ.77.031001     Document Type: Review
Times cited : (71)

References (46)
  • 12
    • 54349093634 scopus 로고    scopus 로고
    • MR ratios above 200% have recently been observed at RT in fully epitaxial MTJs with a MgO(001) tunnel barrier and Heusler-alloy electrodes. This large TMR effect, however, is thought to originate from the coherent tunneling in a crystalline MgO(001) barrier rather than from the half-metallic nature of the electrodes. Note that, as described in §4 and §5, when combined with a crystalline MgO(001) barrier, even simple ferromagnetic electrodes such as bcc Fe, Co and CoFeB yield MTJs with MR ratios from 180% to 500% at RT. 27,29,30,35,36) Note also that these Heusler alloys have fully spin-polarized Δ1 band at EF. By the way, Sakuraba et al.11) observed a MR ratio of 570% at low temperature in MTJs with an amorphous Al-O barrier and Heusler-alloy electrodes. They also observed a feature characteristic of a spin-dependent band gap in the tunneling spectra for those MTJs. This giant TMR effect at low temperature is therefore
    • 11) observed a MR ratio of 570% at low temperature in MTJs with an amorphous Al-O barrier and Heusler-alloy electrodes. They also observed a feature characteristic of a spin-dependent band gap in the tunneling spectra for those MTJs. This giant TMR effect at low temperature is therefore thought to be due to the half-metallic nature of Heusler-alloy electrodes.
  • 38
    • 54349123956 scopus 로고    scopus 로고
    • K. Tsunekawa et al.: Dig. IEEE Int. Magnetics Conf. (Intermag), 2005, HP-08.
    • K. Tsunekawa et al.: Dig. IEEE Int. Magnetics Conf. (Intermag), 2005, HP-08.
  • 39
    • 54349088608 scopus 로고    scopus 로고
    • M. Hosomi et al.: IEDM Tech. Dig., 2005, 19.1.
    • M. Hosomi et al.: IEDM Tech. Dig., 2005, 19.1.
  • 40
    • 54349121660 scopus 로고    scopus 로고
    • T. Kawahara et al.: Tech. Dig. IEEE Int. Solid-State Circuits Conf. (ISSCC), 2007, 26.5.
    • T. Kawahara et al.: Tech. Dig. IEEE Int. Solid-State Circuits Conf. (ISSCC), 2007, 26.5.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.