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Volumn 47, Issue 3 PART 2, 2008, Pages 1853-1857
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Behavior of hydrogen in excimer laser annealing of hydrogen-modulation- doped amorphous silicon layer
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Author keywords
Excimer laser annealing; Hydrogen modulation doped amorphous silicon; Nucleation; Polycrystalline silicon; Recombination energy
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Indexed keywords
AMORPHOUS MATERIALS;
ANNEALING;
CONCENTRATION (PROCESS);
CRYSTALLIZATION;
ELECTRON ABSORPTION;
ENERGY ABSORPTION;
EXCIMER LASERS;
GAS LASERS;
HYDROGEN;
LASERS;
MODULATION;
NANOCRYSTALLINE ALLOYS;
NONMETALS;
NUCLEATION;
POLYCRYSTALLINE MATERIALS;
POLYSILICON;
POWDERS;
SILICON;
ADJUSTING;
AMORPHOUS SILICON LAYERS;
CRYSTAL NUCLEATIONS;
DOPED LAYERS;
ENERGY IRRADIATIONS;
EXCIMER LASER ANNEALING;
POLYCRYSTALLINE SILICON;
POLYCRYSTALLINE SILICONS;
QUALITY CRYSTALS;
RECOMBINATION ENERGIES;
RECOMBINATION ENERGY;
SI FILMS;
AMORPHOUS SILICON;
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EID: 54249160966
PISSN: 00214922
EISSN: 13474065
Source Type: Journal
DOI: 10.1143/JJAP.47.1853 Document Type: Article |
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Times cited : (7)
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References (16)
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