Grain enlargement of polycrystalline silicon by multipulse excimer laser annealing: Role of hydrogen

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 A, 2006, Pages 2726-2730

  Kawamoto, Naoya ^a   Masuda, Atsushi ^b,e   Matsuo, Naoto ^c   Seri, Yasuhiro ^b   Nishimori, Toshimasa ^a   Kitamon, Yoshitaka ^a   Matsumura, Hideki ^b   Hamada, Hiroki ^d   Miyoshi, Tadaki ^a  

^a YAMAGUCHI UNIVERSITY   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c UNIVERSITY OF HYOGO   (Japan)

^d SANYO ELECTRIC CO LTD   (Japan)

^e NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cat CVD; ELA; Grain enlargement; Hydrogen; Polycrystalline Si

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; GRAIN BOUNDARIES; HYDROGEN;

CATALYTIC CHEMICAL VAPOR DEPOSITION (CAT-CVD); ELA; GRAIN ENLARGEMENT; QUARTZ GLASS STRUCTURE;

POLYSILICON;

EID: 33645674902     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.2726     Document Type: Article

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