Effect of hydrogen on secondary grain growth of polycrystalline silicon films by excimer laser annealing in low-temperature process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 6908-6910

  Heya, Akira ^a   Matsuo, Naoto ^a   Matsumura, Hideki ^b   Kawamoto, Naoya ^c  

^a UNIVERSITY OF HYOGO   (Japan)

^b JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

Catalytic chemical vapor deposition; Excimer laser annealing; Grain size; Hydrogen; Nucleation; Polycrystalline silicon; Secondary grain growth; Silicon nitride

Indexed keywords

AMORPHOUS FILMS; CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; GRAIN GROWTH; HYDROGEN; NUCLEATION;

CATALYTIC CHEMICAL VAPOR DEPOSITION; EXCIMER LASER ANNEALING; SECONDARY GRAIN GROWTH;

AMORPHOUS SILICON;

EID: 33749035977     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.6908     Document Type: Article

References (9)

1. R. S. Sposili and J. S. Im: Appl. Phys. Lett. 69 (1996) 2864.
2. C. H. Oh, M. Ozawa and H. Matsumura: Jpn. J. Appl. Phys. 37 (1998) L492.
3. T. Sameshima, M. Hara and S. Usui: Jpn. J. Appl. Phys. 28 (1989) 1789.
4. N. Matsuo, Y. Aya, T. Kanamori, T. Nouda, H. Hamada and T. Miyoshi: Jpn. J. Appl. Phys. 39 (2000) 351.
5. N. Kawamoto, N. Matsuo, H. Abe, F. Anwer, I. Hasegawa, K. Yamano and H. Hamada: Jpn. J. Appl. Phys. 43 (2004) 293.
6. N. Kawamoto, A. Masuda, N. Matsuo, Y. Seri, T. Nishimori, Y. Kitamon, H. Matsumura, H. Hamada and T. Miyoshi: Jpn. J. Appl. Phys. 45 (2006) 2726.
7. H. Matsumura: Thin Solid Films 395 (2001) 1.
8. F. Secco: J. Electrochem. Soc. 119 (1972) 948.
9. C. V. Thompson: J. Appl. Phys. 58 (1985) 763.