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Volumn 893, Issue , 2007, Pages 319-320

Polarization-induced high-quality two-dimensional electrons in a ZnO/ZnMgO heterostructure

Author keywords

High mobility; MBE; Two dimensional electron; ZnMgO; ZnO

Indexed keywords


EID: 54249125989     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2729896     Document Type: Conference Paper
Times cited : (4)

References (10)
  • 10
    • 84882503261 scopus 로고    scopus 로고
    • Zinc oxide bulk, thin films and nanostructures, edited by C. Jagadish and S. Pearton, Oxford: Elsevier
    • M. Yano et al., "ZnO/ZnMgO heterojunction FETs," Zinc oxide bulk, thin films and nanostructures, edited by C. Jagadish and S. Pearton, Oxford: Elsevier, 2006.
    • (2006) ZnO/ZnMgO Heterojunction FETs
    • Yano, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.