1GHz microprocessor integration with high performance transistor and low RC delay

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 683-686

  Ahn, Jonghyon ^a   Kim, Hyun sik ^a   Kim, Tae Jin ^a   Shin, Hyung Ho ^a   Kim, Young Ho ^a   Lim, Dong Uk ^a   Kim, Joon ^a   Chung, Uin ^a   Lee, Soo Cheol ^a   Suh, Kwang Pyuk ^a  

^a SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CMOS INTEGRATED CIRCUITS; CROSSTALK; DIELECTRIC MATERIALS; ELECTRIC POTENTIAL; FIELD EFFECT TRANSISTORS; ION IMPLANTATION; MICROPROCESSOR CHIPS; MOS CAPACITORS; NATURAL FREQUENCIES; SPURIOUS SIGNAL NOISE;

COBALT SALICIDE PROCESS; LOCAL OXIDATION OF SILICON; SHALLOW TRENCH ISOLATION; THERMAL NITRIDE SILICON OXIDE;

INTEGRATED CIRCUIT LAYOUT;

EID: 0033339641     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)