Investigation of DC hot-carrier degradation at elevated temperatures for n-channel metal-oxide-semiconductor field-effect-transistor of 0.13 μm technology

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 4 B, 2006, Pages 3144-3146

  Lin, Jung Chun ^a,b   Chen, Shuang Yuan ^c   Chen, Hung Wen ^c   Jhou, Ze Wei ^a   Lin, Hung Chuan ^c   Chou, Sam ^a   Ko, Joe ^a   Lei, Tien Fu ^b   Haung, Heng Sheng ^c  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^c NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY   (Taiwan)

Author keywords

Analog; Digital; HCI; Hot carrier; Reliability; Temperature

Indexed keywords

DEGRADATION; FIELD EFFECT TRANSISTORS; HUMAN COMPUTER INTERACTION; MOS DEVICES; RELIABILITY; THERMAL EFFECTS;

ANALOG; DIGITAL; DRAIN CURRENT; HOT-CARRIER;

HOT CARRIERS;

EID: 33646930911     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.3144     Document Type: Article

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