Hot carrier effect in ultrathin gate oxide metal oxide semiconductor field effect transistor

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 8, 2005, Pages 5889-5892

  Uraoka, Yukiharu ^a   Honda, Hiroyuki ^a   Fuyuki, Takashi ^a   Sasaki, Takaoki ^b   Yasuhira, Mitsuo ^b  

^a NARA INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^b SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

Author keywords

Hot carrier; LSI; Photoemission; Substrate current; Ultrathin gate oxide

Indexed keywords

COMPUTER SIMULATION; DEGRADATION; LSI CIRCUITS; MATHEMATICAL MODELS; MOSFET DEVICES; PHOTOEMISSION; STRESS ANALYSIS;

DEVICE SIMULATION; SUBSTRATE CURRENT; ULTRATHIN GATE OXIDE;

HOT CARRIERS;

EID: 31544459228     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.5889     Document Type: Article

References (8)

1. M. Alam and B.Weir: IEEE IEDM Tech. Dig., 1999, p. 449.
2. R. Degraeve, G. Groeseneken, R. Bellens, J. L. Ogier, M. Depas, P. Roussel and H. Mae: IEEE Trans Electron Devices 45 (1997) 904.
3. S. Takagi, N. Yasuda and A. Toriumi: IEEE Trans. Electron Devices 46 (1999) 335.
4. E. Rosenbaum and L. F. Register: IEEE Trans. Electron Devices 44 (1997) 317.
5. A. Ghetti, M. A. Alam, J. Bude, D. Monroe, E. Sangiorgi and H. Vaidya: IEEE IEDM Tech. Dig., 1999, p. 723.
6. N. Kimizuka, K. Yamaguchi, K. Imai, T. lizuka, C. T. Liu, R. C. Keller and T. Horiuchi; Symp. VLSI Technology, 2000, p. 92.
7. A. Toriumi, M. Yoshimi, M. Iwase, Y. Akiyama and K. Taniguchi: IEEE Trans. Electron Devices 34 (1987) 1501.
8. Y. Uraoka, N. Tsutsu, T. Morii and K. Tsuji: IEEE Trans. Electron Devices 47 (1993) 1426.