First-principles study of silicon nanowires with different surfaces

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 2, 2008, Pages 3303-3309

  Gao, Mingzhi ^a   You, Siyu ^a   Wang, Yan ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Density functional theory; Electronic properties; Oxygen terminated; Silicon nanowire; Surface modification

Indexed keywords

DENSITY FUNCTIONAL THEORY; ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; ELECTRON MOBILITY; ELECTRONIC PROPERTIES; FIELD EFFECT TRANSISTORS; HYDROGEN; MOSFET DEVICES; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; OXYGEN; SEMICONDUCTING INDIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOLID STATE PHYSICS; SURFACE TREATMENT;

CONDUCTIVE; HOLE EFFECTIVE MASSES; LARGE-STRAIN; MOS-FET; SEMICONDUCTOR FIELD EFFECTS; SILICON NANOWIRE; SILICON NANOWIRES; SURFACE MODIFICATION; SURFACE MODIFICATIONS; THEORETICAL CALCULATIONS;

NONMETALS;

EID: 54249134831     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.3303     Document Type: Article

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