Impact of structure relaxation on the ultimate performance of a small diameter, n-Type (110) Si-nanowire MOSFET

IEEE Transactions on Nanotechnology

Volumn 6, Issue 2, 2007, Pages 225-228

  Liang, Gengchiau ^a,b   Kienle, Diego ^b   Patil, Sunil K R ^c   Wang, Jing ^a,b   Ghosh, Avik W ^d   Khare, Sanjay V ^c  

^a IEEE   (Singapore)

^b PURDUE UNIVERSITY   (United States)

^c UNIVERSITY OF TOLEDO   (United States)

^d UNIVERSITY OF VIRGINIA   (United States)

Author keywords

Bandstructure; Field effect transistor (FET); Geometry optimization; Nanowire; Quantum confinement; Tight binding

Indexed keywords

BANDSTRUCTURE; GEOMETRY OPTIMIZATION; STRUCTURE RELAXATION; TIGHT BINDING;

COMPUTATIONAL GEOMETRY; MATHEMATICAL MODELS; NANOWIRES; OPTIMIZATION; QUANTUM CONFINEMENT; SILICON;

MOSFET DEVICES;

EID: 33947244580     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2007.891816     Document Type: Article

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