Microstructural analysis of Au/Ni/Al/Ti/Ta ohmic contact on AlGaN/GaN heterostructure

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 223-226

  Kim, Ki Hong ^a   Jeon, Chang Min ^a   Oh, Sang Ho ^a   Park, Chan Gyung ^a   Lee, Jung Hee ^b   Lee, Kyu Seok ^c   Lee, Jong Lam ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b Kyungpook National University   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; GOLD COMPOUNDS; HETEROJUNCTIONS; III-V SEMICONDUCTORS; NICKEL; OHMIC CONTACTS; TANTALUM COMPOUNDS; TITANIUM; TITANIUM NITRIDE; WIDE BAND GAP SEMICONDUCTORS;

ALGAN/GAN HETEROSTRUCTURES; CONTACT BEHAVIOR; MICROSTRUCTURAL ANALYSIS; NITRIDE PHASIS;

ALUMINUM;

EID: 21844455307     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390029     Document Type: Conference Paper

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