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Volumn 148, Issue 9-10, 2008, Pages 395-398
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Effects of annealing temperature of buffer layer on structural and optical properties of ZnO thin film grown by atomic layer deposition
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Author keywords
A. ZnO; B. Annealing; B. Atomic layer deposition
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Indexed keywords
ANNEALING;
ATOMIC PHYSICS;
ATOMS;
BUFFER LAYERS;
CRYSTAL ATOMIC STRUCTURE;
METALLIC FILMS;
OPTICAL FILMS;
OPTICAL PROPERTIES;
OPTICAL WAVEGUIDES;
PHYSICAL VAPOR DEPOSITION;
PULSED LASER DEPOSITION;
SEMICONDUCTING SILICON COMPOUNDS;
SEMICONDUCTING ZINC COMPOUNDS;
SILICON;
SOLIDS;
THICK FILMS;
THIN FILM DEVICES;
THIN FILMS;
ZINC ALLOYS;
ZINC OXIDE;
(002) PEAKS;
A. ZNO;
ANNEALING TEMPERATURES;
ATOMIC LAYER DEPOSITION (ALD;
ATOMIC LAYERS;
B. ANNEALING;
B. ATOMIC LAYER DEPOSITION;
EDGE EMISSIONS;
HIGH QUALITIES;
RING OPERATORS;
SI SUBSTRATES;
SMOOTHER SURFACES;
XRD MEASUREMENTS;
ZNO BUFFER LAYERS;
ZNO THIN FILMS;
ATOMIC LAYER DEPOSITION;
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EID: 54249111777
PISSN: 00381098
EISSN: None
Source Type: Journal
DOI: 10.1016/j.ssc.2008.09.034 Document Type: Article |
Times cited : (39)
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References (12)
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