Room-temperature coulomb oscillations of carbon nanotube field-effect transistors with oxidized insulators

Japanese Journal of Applied Physics

Volumn 47, Issue 4 PART 1, 2008, Pages 2056-2059

  Ohno, Yasuhide ^a   Asai, Yoshihiro ^a   Maehashi, Kenzo ^a   Inoue, Koichi ^a   Matsumoto, Kazuhiko ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

Carbon nanotube; Coulomb oscillation; Field effect transistor; Single electron transistor

Indexed keywords

ALUMINA; CAPACITANCE MEASUREMENT; CARBON; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; FIELD EFFECT TRANSISTORS; MESFET DEVICES; MOTION ESTIMATION; NANOCOMPOSITES; NANOSENSORS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOTUBES; TRANSIENTS; TRANSISTORS; TUNNELS;

AMBIPOLAR CHARACTERISTICS; COULOMB OSCILLATION; COULOMB OSCILLATIONS; ELECTRON TRANSISTORS; FIELD-EFFECT TRANSISTOR; GATE VOLTAGES; NANOTUBE CHANNELS; ROOM TEMPERATURES; SET OPERATIONS; SINGLE-ELECTRON TRANSISTOR; THIN TUNNEL BARRIERS; TUNNEL BARRIER LAYERS;

CARBON NANOTUBES;

EID: 54249097003     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.47.2056     Document Type: Article

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