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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 44, Issue 4 B, 2005, Pages 2596-2599

Quantum dots and their tunnel barrier in semiconducting single-wall carbon nanotubes with a p-type behavior

(4) Tsuya, Daiju a,b Suzuki, Masaki a,c Aoyagi, Yoshinobu b Ishibashi, Koji a,c

a INST OF PHYS AND CHEMICAL RESEARCH (Japan)

b TOKYO INSTITUTE OF TECHNOLOGY (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

Carbon nanotubes; Coulomb blockade; Multi dots; Quantum dot; Single electron transistor

Indexed keywords

CARBON NANOTUBES; COULOMB BLOCKADE; CURRENT VOLTAGE CHARACTERISTICS; FABRICATION; GATES (TRANSISTOR); SEMICONDUCTOR QUANTUM DOTS; THERMAL EFFECTS;

ELECTRICAL TRANSPORT PROPERTIES; GATE VOLTAGE; MULTI DOTS; SINGLE-ELECTRON TRANSISTOR;

ELECTRON TUNNELING;

EID: 21244501286 PISSN: 00214922 EISSN: None Source Type: Journal
DOI: 10.1143/JJAP.44.2596 Document Type: Conference Paper

Times cited : (13)

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