EPR study of hydrogen-related defects in boron-doped p-type CVD homoepitaxial diamond films

Diamond and Related Materials

Volumn 13, Issue 11-12, 2004, Pages 2096-2099

  Mizuochi, N ^a,b,c   Ogura, M ^b,c   Watanabe, H ^b,c   Isoya, J ^a,b   Okushi, H ^b,c   Yamasaki, S ^b,c  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Boron doped CVD diamond; Defect; Electron paramagnetic resonance; Hydrogen

Indexed keywords

BORON; CHEMICAL BONDS; CHEMICAL VAPOR DEPOSITION; CRYSTAL DEFECTS; DOPING (ADDITIVES); ELECTRON ENERGY LEVELS; ELECTRON SPIN RESONANCE SPECTROSCOPY; FERMI LEVEL; HYDROGEN; RAPID THERMAL ANNEALING;

BAND EDGE; HIGH-QUALITY NATURAL DIAMONDS; MICROWAVE FREQUENCY;

DIAMOND FILMS;

EID: 7544236614     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.06.019     Document Type: Conference Paper

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