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Volumn 40, Issue 1-8, 1996, Pages 181-184

Interface and layer thickness dependence of the effective mass in InAs/GaSb superlattices studied by high field cyclotron resonance

(6) Nicholas, R J a Shimamoto, Y b Imanaka, Y b Miura, N b Mason, N J a Walker, P J a

a UNIVERSITY OF OXFORD (United Kingdom)

b UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLOTRON RESONANCE; HETEROJUNCTIONS; LOW TEMPERATURE PROPERTIES; MAGNETIC FIELDS; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; RAMAN SCATTERING; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

BAND GAP; DIRECT TRANSMISSION; ELECTRON ELECTRON INTERACTION; HIGH FIELD CYCLOTRON RESONANCE; SUPERLATTICE PERIOD;

SEMICONDUCTOR SUPERLATTICES;

EID: 0029724632 PISSN: 00381101 EISSN: None Source Type: Journal
DOI: 10.1016/0038-1101(95)00242-1 Document Type: Article

Times cited : (11)

References (9)

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