Influence of residual impurity background on the nonradiative recombination processes in high purity InAsGaSb superlattice photodiodes

Applied Physics Letters

Volumn 89, Issue 24, 2006, Pages

  Da Silva, E C F ^a   Hoffman, D ^a   Hood, A ^a   Nguyen, B M ^a   Delaunay, P Y ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CURRENTS; ELECTROLUMINESCENCE; HIGH TEMPERATURE EFFECTS; INDIUM COMPOUNDS; MEASUREMENT THEORY; QUANTUM EFFICIENCY; SUPERLATTICES;

ELECTROLUMINESCENCE MEASUREMENTS; INJECTION CURRENT; NONRADIATIVE RECOMBINATION PROCESSES; RECOMBINATION PROCESSES;

PHOTODIODES;

EID: 33845749649     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2405877     Document Type: Article

References (6)

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