Sensitisation of erbium emission by silicon nanocrystals-doped SnO2

Journal of Luminescence

Volumn 129, Issue 1, 2009, Pages 30-33

  Bouzidi, C ^a   Elhouichet, H ^a   Moadhen, A ^a   Oueslati, M ^a  

^a FACULTÉ DES SCIENCES DE TUNIS   (Tunisia)

Author keywords

Erbium; Photoluminescence; Sensitisation; Si nanocrystals; SnO2; Sol gel

Indexed keywords

ERBIUM; NANOCLUSTERS; NANOCRYSTALS; OXYGEN VACANCIES; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SILICON; SOL-GEL PROCESS; SOL-GELS;

ERBIUM EMISSION; EXCITATION PROCESS; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SENSITISATION; SI NANOCRYSTAL; SILICON NANOCRYSTALS; SILICON SUBSTRATES; SNO2;

SILICON COMPOUNDS;

EID: 53849137283     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jlumin.2008.07.017     Document Type: Article

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