Flatband potential of F:SnO2 in a TiO2 dye-sensitized solar cell: An interference reflection study

Journal of Physical Chemistry B

Volumn 107, Issue 35, 2003, Pages 9397-9403

  Turrion M ^a   Bisquert, J ^b   Salvador, P ^c  

^a INSTITUTO DE ESTRUCTURA DE LA MATERIA   (Spain)

^b UNIVERSITAT JAUME I   (Spain)

^c UNIVERSITAT DE LES ILLES BALEARS   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DOPING (ADDITIVES); DYES; ELECTROLYTES; ELECTRONS; FERMI LEVEL; INTERFACES (MATERIALS); REFLECTION; SUBSTRATES; TITANIUM DIOXIDE;

CONDUCTION BAND EDGE; FLATBAND POTENTIAL; INTERFERENCE REFLECTION; PHOTOVOLTAGE;

SOLAR CELLS;

EID: 0141682919     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp034774o     Document Type: Article

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