Thermal quenching of photoluminescence from Er-doped GaN thin films

Journal of Alloys and Compounds

Volumn 341, Issue 1-2, 2002, Pages 62-66

  Seo, J T ^a   Hommerich U ^a   Lee, D C ^b   Heikenfeld, J ^b   Steckl, A J ^b   Zavada, J M ^c  

^a HAMPTON UNIVERSITY   (United States)

^b University of Cincinnati   (United States)

^c US Army European Research Office   (United Kingdom)

Author keywords

Er doped GaN; Luminescence spectroscopy; Thermal quenching

Indexed keywords

DOPING (ADDITIVES); ERBIUM; GALLIUM NITRIDE; NEODYMIUM LASERS; PHOTOLUMINESCENCE; POSITIVE IONS; QUENCHING; RADIOACTIVITY;

THERMAL QUENCHING; WIDE-GAP SEMICONDUCTORS;

THIN FILMS;

EID: 12144290747     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-8388(02)00062-2     Document Type: Conference Paper

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