Anisotropic strain on phonons in a-plane GaN layers studied by Raman scattering

Journal of Materials Science: Materials in Electronics

Volumn 19, Issue SUPPL. 1, 2008, Pages

  Irmer, G ^a   Brumme, T ^a   Herms, M ^b   Wernicke, T ^b   Kneissl, M ^b,c   Weyers, M ^a  

^a TU BERGAKADEMIE FREIBERG   (Germany)

^b LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

^c TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

A-PLANE; ANISOTROPIC STRAINS; EPITAXIAL LATERAL OVERGROWTH; FREQUENCY SHIFTING; GAN LAYERS; PLANE SAPPHIRE; STRAIN STATES; STRUCTURES GROWN;

ANISOTROPY; ARCHITECTURAL ACOUSTICS; CORUNDUM; EPITAXIAL GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; RAMAN SCATTERING; SEMICONDUCTING GALLIUM;

EPITAXIAL LAYERS;

EID: 53649104511     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-007-9557-1     Document Type: Article

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