Defects in cadmium zinc telluride crystals revealed by etch-pit distributions

Journal of Crystal Growth

Volumn 310, Issue 21, 2008, Pages 4493-4498

  Hossain, A ^a   Bolotnikov, A E ^a   Camarda, G S ^a   Cui, Y ^a   Yang, G ^a   James, R B ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

A1. Etching; A1. Line defects; B2. Semiconducting II VI materials; B3. Infrared devices

Indexed keywords

CADMIUM; CADMIUM ALLOYS; CRYSTAL DEFECTS; CRYSTAL GROWTH; CRYSTALLOGRAPHY; CRYSTALS; ETCHING; GRAIN BOUNDARIES; NETWORK PROTOCOLS; POWDERS; SENSOR NETWORKS; TELLURIUM COMPOUNDS; ZINC;

A1. ETCHING; A1. LINE DEFECTS; B2. SEMICONDUCTING II-VI MATERIALS; B3. INFRARED DEVICES;

DISLOCATIONS (CRYSTALS);

EID: 53449101331     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.088     Document Type: Article

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