Recent progress in CdZnTe crystals

Journal of Electronic Materials

Volumn 28, Issue 6, 1999, Pages 683-687

  Koyama, A ^a   Hichiwa, A ^a   Hirano, R ^a  

^a JAPAN ENERGY CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; CRYSTAL GROWTH; CRYSTAL IMPURITIES; FREEZING; INGOTS; LITHIUM; PRESSURE CONTROL; SEMICONDUCTOR GROWTH; SODIUM; STOICHIOMETRY;

CADMIUM ZINC TELLURIDE; VERTICAL GRADIENT FREEZING (VGF);

SEMICONDUCTING CADMIUM TELLURIDE;

EID: 0032676457     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-999-0054-6     Document Type: Article

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