Characterization of the charge transport uniformity of CdZnTe crystals for large-volume nuclear detector applications

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 I, 2004, Pages 2443-2447

  Soldner, Stephen A ^a   Narvett, Alex J ^a   Covalt, David E ^a   Szeles, Csaba ^a  

^a II VI Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER; CRYSTAL GROWTH; CRYSTALS; ELECTRON TRANSPORT PROPERTIES; FEEDBACK; INFRARED RADIATION; MICROSCOPIC EXAMINATION; NUCLEAR ENERGY; SEMICONDUCTING CADMIUM COMPOUNDS;

CHARGE TRANSPORT UNIFORMITY; ENERGY RESOLUTION; INFRARED MICROSCOPY; NUCLEAR DETECTORS;

RADIATION DETECTORS;

EID: 8344288309     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835569     Document Type: Article

References (6)

1. C. Szeles, S. E. Cameron, S. A. Soldner, J.-O. Ndap, and M. D. Reed, "Development of the high-pressure electro-dynamic gradient crystal growth technology for semi-insulating CdZnTe growth for radiation detector applications," J. Electron. Mater., to be published.
2. P. N. Luke, "Unipolar charge sensing with coplanar electrodes application to semiconductor detectors," IEEE Trans. Nucl. Sci., vol. 42, pp. 207-213, Feb. 1995.
3. M. Amman, J. S. Lee, and P. N. Luke, "Electron trapping nonuniformity in high-pressure-Bridgman-grown CdZnTe," J. Appl. Phys., vol. 92, pp. 3198-3206, 2002.
4. _, "Alpha particle response characterization of CdZnTe," Proc. SPIE, vol. 4507, pp. 1-11, 2001.
5. C. Szeles, S. E. Cameron, J.-O. Ndap, and W. C. Chalmers, "Advances in the crystal growth of semi-insulating CdZnTe for radiation detector applications," IEEE Trans. Nucl. Sci., vol. 49, pp. 2535-2540, Aug. 2001.
6. K. Hecht, "Zum mechanismus der lichtelektrischen primarstromes in isolierenden kristallen," Zeits. Phys., vol. 77, pp. 235-245, 1932.