Formation and role of defects in stacked large binary InAs/GaAs quantum dot structures

Semiconductor Science and Technology

Volumn 22, Issue 2, 2007, Pages 80-85

  Ng, J T ^a   Bangert, U ^a   Missous, M ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; INDIUM ARSENIDE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS;

DEFECT FORMATION; QUANTUM DOT STRUCTURES; SURFACE DENSITY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 34247202129     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/22/2/014     Document Type: Article

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