Study of GaN: Eu3+ thin films deposited by metallorganic vapor-phase epitaxy

Journal of the Electrochemical Society

Volumn 155, Issue 11, 2008, Pages

  Laski, J ^a   Klinedinst, K ^c   Raukas, M ^a   Mishra, K C ^a   Tao, J ^b   McKittrick, J ^b   Talbot, J B ^b  

^a OSRAM SYLVANIA   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ATMOSPHERIC PRESSURE; ATMOSPHERICS; CORUNDUM; CRYSTAL GROWTH; ELECTROLYSIS; EMISSION SPECTROSCOPY; ENERGY TRANSFER; EPITAXIAL GROWTH; EUROPIUM; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LASER EXCITATION; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; LUMINESCENCE; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; NITRIDES; ORGANOMETALLICS; PULSED LASER APPLICATIONS; PULSED LASER DEPOSITION; SEMICONDUCTING GALLIUM; THICK FILMS;

EMISSION INTENSITIES; EU3+ IONS; EXCITATION INTENSITIES; EXCITATION SPECTRUM; LIGHT-EMITTING DIODE; PHOTOLUMINESCENCE (PL); PL EXCITATION SPECTROSCOPY; PULSED LASERS; SAPPHIRE SUBSTRATES; THIN FILMS; VAPOR-PHASE EPITAXY;

GALLIUM ALLOYS;

EID: 52649167775     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2969910     Document Type: Article

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