Low-energy charge-transfer state and optical properties of Eu 3+-doped GaN

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2639-2643

  Tanaka, Masanori ^a,e   Morishima, Shinichi ^b   Bang, Hyungjin ^b   Ahn, Jeung Sun ^c   Sekiguchi, Takashi ^d   Akimoto, Katsuhiro ^b  

^a JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e Hikari Building ^*  (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRANSFER STATE; ELECTRON TRANSFER; EXCITATION MECHANISMS; EXCITATION SPECTRUM; INTER-BAND EXCITATIONS; LUMINESCENCE PROPERTIES; RED LUMINESCENCE; TRANSITION STRENGTHS;

CHARGE TRANSFER; ENERGY TRANSFER; GALLIUM NITRIDE; LUMINESCENCE; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; STRENGTH OF MATERIALS;

EXCITED STATES;

EID: 52649104919     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303447     Document Type: Conference Paper

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