Room-temperature photoluminescence and electroluminescence properties of sputter-grown gallium nitride doped with europium

Journal of Applied Physics

Volumn 95, Issue 9, 2004, Pages 4787-4790

  Kim, Joo Han ^a   Holloway, Paul H ^b,c  

^a INTEL CORPORATION   (United States)

^b University of Florida   (United States)

^c UNIVERSITY OF FLORIDA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; COSPUTTER DEPOSITIONS; RADIATIVE ENERGIES; RADIATIVE MATERIALS;

DOPING (ADDITIVES); ELECTROLUMINESCENCE; ELECTRON ENERGY LEVELS; EUROPIUM; MAGNETRON SPUTTERING; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PHOTOMULTIPLIERS; QUENCHING; RELAXATION PROCESSES; SILICON; SPUTTER DEPOSITION; SUBSTRATES; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM NITRIDE;

EID: 2442545524     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1652226     Document Type: Article

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