Nitrogen diffusion and accumulation at the Si SiO2 interface in SiO2/Si3N4/SiO2 structures for nonvolatile semiconductor memories

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 4, 2005, Pages 1558-1561

  Saraf, Meirav ^a   Edrei, Rachel ^a   Shima Edelstein, Ruth ^b   Roizin, Yakov ^b   Hoffman, Alon ^a  

^a TECHNION ISRAEL INSTITUTE OF TECHNOLOGY   (Israel)

^b TOWER SEMICONDUCTOR LTD   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); MASS SPECTROMETRY; NITROGEN; SEMICONDUCTOR MATERIALS; SILICA; SILICON NITRIDE;

NITROGEN ACCUMULATION; ONO FABRICATION; SEMICONDUCTOR MEMORIES;

DIFFUSION;

EID: 31144471226     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1943442     Document Type: Article

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